| 摘要 |
PURPOSE: A method for fabricating a capacitor of a semiconductor device by using a hemispherical silicon grain(HSG) is provided to guarantee sufficient capacitance while a depletion ratio is minimized in an ultra-high integrated device using a metal layer as an upper electrode, by controlling an increase of the depletion ratio in a negative bias while an HSG growth is not obstructed. CONSTITUTION: A lower layer having a predetermined conductive structure and a predetermined insulation structure is formed on a semiconductor substrate. The first silicon layer is formed on the lower layer. The second silicon layer is formed on the first silicon layer. The HSG(16) is formed on the second silicon layer. A dielectric thin film and an upper electrode are formed to cover the HSG. The first silicon layer is thicker than the second silicon layer, doped with higher density as compared with the second silicon layer.
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