| 摘要 |
PURPOSE: A method for fabricating a semiconductor device is provided to reduce the size of a transistor while a short channel margin and a refresh characteristic of a dynamic random access memory(DRAM) are guaranteed, by forming the first and second sidewall insulation layers on both sidewalls of a gate. CONSTITUTION: A gate insulation layer(12), a conductive layer(13) for the gate and a capping insulation layer(14) are sequentially deposited on a semiconductor substrate(10). The capping insulation layer, the conductive layer for the gate and the gate insulation layer are sequentially patterned to form the gate. A low density ion region is formed in the semiconductor substrate at both sides of the gate. The first sidewall insulation layer(17) is formed on both sidewalls of the gate. The second sidewall insulation layer(18) is formed on the sidewall of the first sidewall insulation layer. A high density ion region is formed in the semiconductor substrate at both sides of the second sidewall insulation layer.
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