METHOD FOR MANUFACTURING GATE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a gate of a semiconductor device is provided to enhance an electric characteristic by entirely equalizing a thickness of a film when a salicide film is formed. CONSTITUTION: A gate insulation film(12) is formed on a front surface of a semiconductor substrate(11), grown to a thermal oxidation film by a thermal oxidation process and processed by a nitriding process. A non-doped polysilicon film is formed on the gate insulation film. A photoresist film is formed on the non-doped polysilicon film and a gate(14) is formed by etching the non-doped polysilicon film and the gate insulation film. After removing the photoresist film and forming a spacer(15), an impurity ion injection process forms a doped polysilicon film and the impurity ion is injected into a source/drain area. A metal film is formed on the surface of the results. The salicide(16a) is formed by performing an LTP(Laser Thermal Process) to the metal film, and a gate electrode(13b) and the source/drain area(s,d) are formed simultaneously. The gate is formed by removing the metal film not reacting with silicon through the LTP.