| 摘要 |
PURPOSE: A method for fabricating a mask pattern is provided to guarantee a short process margin in a photolithography process performed regarding a portion where an active region is adjacent to an active pattern and to prevent a critical dimension uniformity from being deteriorated, by forming the active pattern on a mask and by forming slits at both ends of the active pattern such that the slits are separated from each other. CONSTITUTION: The active pattern(40) for confining the active region of a semiconductor substrate is formed on the mask while predetermined slits(50) are formed at both ends of the active pattern. The slits have the size of 20-40 nanometer.
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