| 摘要 |
PURPOSE: A detection method of defects of exposure masks is provided to easily detect a defect of a PSM(Phase Shift Mask) by comparing photoresist pattern datum scanned through a defect detection apparatus with CAD(Computer Aided Design) data signals. CONSTITUTION: A half-tone type PSM(Phase Shift Mask)(10) is formed by patterning a phase shift layer(14) on a transparent substrate(12) according to CAD datum using an E-beam processing. At this time, a defect(16) is formed on the substrate(12). A sub-mask(40) is formed by selectively performing an acidification on a photoresist(44) of a sub-substrate(42) using the PSM(10). After forming a photoresist pattern by developing the photoresist(44), a thermal treatment is performed on the photoresist pattern so as to harden the pattern at the temperature of 100-300 deg.C. At this time, a defected pattern(46) is formed corresponding to the defect(16) on the substrate(12). Then, the position of the defected pattern(46) is detected by comparing data signals detected through a TDI(Time Delay Integration) sensor with the CAD data signals.
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