| 摘要 |
PURPOSE: A method manufacturing a semiconductor device including a logic part and a memory part is provided to enhance the characteristic of the resistance and the leakage current of the logic and memory area by forming a silicide film on the logic part and preventing the formation of the silicide film on the memory part. CONSTITUTION: A well and a device isolation film(24) of the logic and the memory part are formed on a semiconductor substrate. A gate insulation film(25) and a gate conductive film(26) are successively deposited on the substrate. A gate pattern is respectively formed on the logic and the memory part by patterning the gate insulation film and the gate conductive film. A source/drain area(33) is formed on an active area of the both sides of the gate pattern and an interlayer insulation film(40) is deposited on a surface of the results. The interlayer insulation film is etched in order to remain the interlayer insulation film on the both sidewalls of the gate pattern and the storage area of the memory part. A silicide film(50) is formed on the exposed substrate and the gate pattern, and a capacitor(53) is formed on the storage area.
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