| 摘要 |
PURPOSE: An electrostatic discharge(ESD) protection circuit is provided to control the characteristic of a silicon controlled rectifier(SCR) device and to reduce the side of the SCR device, by forming the SCR of a vertical structure while using a conventional complementary metal oxide semiconductor(CMOS) process. CONSTITUTION: A well region(22) of the second conductivity type is formed in a predetermined region in the surface of a semiconductor substrate(21) of the first conductivity type. A drift region(26) of the first conductivity type is formed in a predetermined region of the well region. The first and second impurity regions(27,28) of the second conductivity type are formed in a predetermined region of the well region at both sides of the drift region. The first and second impurity regions(23,24) of the first conductivity type are formed in a predetermined region of the well region at both sides of the drift region. The third and fourth impurity regions(30,31) of the first conductivity type are formed in a predetermined region of the drift region at regular intervals. The third impurity region(29) of the second conductivity type is formed between the third and fourth impurity regions of the first conductivity type in the drift region. A buried impurity region of the first conductivity type is formed under the well region, connected to the first and second impurity regions of the first conductivity type.
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