| 摘要 |
PROBLEM TO BE SOLVED: To provide an MOS image sensor having a structure, where a signal which is photoelectric-converted at reading will not be destructed. SOLUTION: The MOS image sensor is provided with a row-selecting line 2 and a signal reset line 3, which are two horizontal direction wirings across a pixel 6. The upper side relative to the scan direction of the horizontal direction selecting line is taken as the row-selecting line 2 while taking the lower side as the signal reset line 3. A photoelectric conversion part 5 of the pixel 6 is sandwiched between the row selecting line 2 and the signal reset line 3 for arrangement above and below the pixel 6.
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