| 摘要 |
<p>PROBLEM TO BE SOLVED: To realize a method of manufacturing photomasks which is capable of decreasing the variations of the line widths within the masks and decreasing the variations in the line widths among the respective masks by correcting the influence of a proximity effect and is capable of shortening the time required for mask manufacture. SOLUTION: The photomasks are manufactured by dividing a mask device region to regions of prescribed sizes, calculating pattern area rates by each of the divided regions, comparing the calculated pattern area rates of each of the respective regions with the prescribed set target pattern area rates, extracting the regions of the pattern area rates smaller than the target, forming pseudo patterns in such a manner that the target pattern area rates are attained in the margin portions where the patterns do not exist in the regions extracted in the manner described above, forming the masks with the pseudo patterns and finally removing the pseudo patterns from the masks with the pseudo patterns.</p> |
