| 摘要 |
PURPOSE: A method for forming a contact hole of a semiconductor device is provided, in which the over hang does not occur, so improving the reliability of the device by perfectly burying the contact hole. CONSTITUTION: A gate electrode is formed on a semiconductor substrate(201) and a spacer(205) is formed on a sidewall of the gate electrode. A junction(206) is formed on the substrate by performing an impurity ion implant process. An etching barrier film(207) is formed on a surface. An interlayer insulation film(208) is formed and a reflection prevention film(209) is formed on the interlayer insulation film. After coating the surface with a photoresist film(210), the substrate is patterned by using a contact mask. By performing a full surface etching process, the contact hole is formed by removing the reflection prevention film and the exposed etching barrier film. After forming the photoresist film, the ion implant process is performed in order to compensate for the loss of the exposed junction and a diffusion barrier film is formed on the surface.
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