| 摘要 |
<p>A transfer mask blank comprising a support substrate having struts, a silicon oxide layer formed on the support substrate, and a silicon membrane formed on the silicon oxide layer, characterized in that an average phosphorus concentration in the silicon membrane is between 5x1018 atom/cm3 and 1x1020 atom/cm3, and a phosphorus concentration uniformity in the silicon membrane is up to 20%. The transfer mask blank can easily set a silicon membrane stress to a proper value, and can easily restrict warp and deform of a pattern.</p> |
