| 摘要 |
PURPOSE: A method for chemical vapor deposition is provided to increase a vapor pressure and improve a carrying characteristic of raw material by implanting a silylation agent into a halogen gas. CONSTITUTION: An organic metal compound as a reaction material is vaporized in a vaporizer. The vaporized organic metal compound is implanted into a reactor by using a carrier gas. A high dielectric layer is formed on a semiconductor substrate loaded in the reactor. A silylation agent is implanted into the carrier gas. Main metals of the organic metal compound are selected from groups which are formed by Ba, Sr, Ti, Pb, Zr, Bi, Cu, and their combination. The organic metal compound is selected from groups which are formed by β-diketinate, acetylacetonate, alkoxide, and their combination. The silylation agent is selected from groups which are formed by hexametyldisilazane, trimethylchlorosilane, N-methyl-N-trimethysilutrifluoroaceamaide, t-butyldimethylchlorosilane, and their combination.
|
