| 摘要 |
A fabrication method for a dual damascene structure includes forming a first dielectric layer on a substrate already comprises a first conductive layer formed therein. The first dielectric layer is then patterned to form a via opening, exposing the first conductive layer. After this, a second dielectric layer is formed on the first dielectric layer by hot filament chemical vapor deposition, wherein the second dielectric layer does not fill the via opening. The second dielectric layer is then patterned to form a trench. The trench and the via opening together form a dual damascene opening. A second conductive layer is further filled the damascene opening to complete the fabrication of a dual damascene structure.
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