| 发明名称 |
Scalable dielectric |
| 摘要 |
An interpoly dielectric is formed using only a single layer of oxide and a single layer of nitride to allow a reduction in thickness. The nitride is thermally grown on silicon in a nitrogen environment to maintain a high quality layer, while the oxide is deposited by LPCVD.
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| 申请公布号 |
US2002084482(A1) |
申请公布日期 |
2002.07.04 |
| 申请号 |
US20010008695 |
申请日期 |
2001.11.08 |
| 申请人 |
KAYA CETIN;CHEN MEN CHEE;SAN KEMAL TAMER |
发明人 |
KAYA CETIN;CHEN MEN CHEE;SAN KEMAL TAMER |
| 分类号 |
H01L21/28;H01L21/314;H01L21/316;H01L21/318;H01L29/51;(IPC1-7):H01L29/788 |
主分类号 |
H01L21/28 |
| 代理机构 |
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代理人 |
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