| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to prevent the degradation of BLC(Borderless Contact) by using a silicon nitride as an etch stopper. CONSTITUTION: An active region and a field region are defined by forming a field oxide(22) including a thermal oxide and a silicon nitride in a semiconductor substrate(21). Then, a transistor having a gate electrode(23) and a source and drain regions(24) is formed in the active region. After forming an interlayer dielectric(28) on the entire surface of the resultant structure, a BLC processing is carried out so as to form a contact(29).
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