| 摘要 |
PURPOSE: A method for forming an insulating layer of a semiconductor device is provided to improve the planarization of an insulating layer by generating compressive and tensile power to a wafer. CONSTITUTION: An interlayer dielectric(2) is formed on a semiconductor substrate(1). At this time, a PETEOS layer having compressive and tensile power is used as the interlayer dielectric(2). Also, processing conditions, such as LF power, deposition temperature or pressure of a chamber, are controlled. The surface of the PETEOS layer(2) is then planarized by CMP(Chemical Mechanical Polishing) using a polishing unit(3).
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