Production of conducting pathways, especially aluminum pathways used in CMOS circuits or DRAM cells comprises applying an aluminum conducting layer, a titanium nitride layer and a lacquer mask onto a substrate, and structuring

摘要

Production of conducting pathways, especially aluminum pathways comprises applying an aluminum conducting layer (13) onto a substrate (11); applying a titanium nitride layer; applying a lacquer mask; structuring the titanium nitride layer to a hard mask (19) using the lacquer mask; and structuring the conducting layer to form the conducting pathways using the hard mask. Preferred Features: The titanium nitride layer is 60-200 nm thick. The aluminum conducting layer contains copper and/or silicon as additives. A titanium layer (12) is applied to the conducting layer before the titanium nitride layer is applied. The conducting pathways have an aspect ratio of more than 2 and have a height of more than 350 nm and a width of less than 180 nm.