| 发明名称 |
POWER MOSFET AND METHODS OF FORMING AND OPERATING THE SAME |
| 摘要 |
In power MOSFET embodiments of the present invention which provide highly linear transfer characteristics and can be used effectively in linear power amplifiers a relatively highly doped transition region (117) is preferably provided between the channel region (116) and the drift region (112). Upon depletion, this transition region provides a potential barrier that supports separate and simultaneous linear and current saturation modes. |
| 申请公布号 |
WO0201644(A3) |
申请公布日期 |
2002.07.04 |
| 申请号 |
WO2001US18072 |
申请日期 |
2001.06.05 |
| 申请人 |
SILICON WIRELESS CORPORATION;GIANT SEMICONDUCTOR CORPORATION;BALIGA, BANTVAL, JAYANT |
发明人 |
BALIGA, BANTVAL, JAYANT |
| 分类号 |
H01L21/8234;H01L27/088;H01L29/06;H01L29/08;H01L29/40;H01L29/417;H01L29/423;H01L29/772;H01L29/78 |
主分类号 |
H01L21/8234 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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