发明名称 THIN-FILM BATTERY HAVING ULTRA-THIN ELECTROLYTE AND ASSOCIATED METHOD
摘要 A method and system for fabricating solid-state energy-storage devices including fabrication films for devices without an anneal step. A film of an energy-storage device is fabricated by depositing a first material layer to a location on a substrate. Energy is supplied directly to the material forming the film. The energy can be in the form of energized ions of a second material. Supplying energy directly to the material and/or the film being deposited assists in controlling the growth and stoichiometry of the film. The method allows for the fabrication of ultrathin films such as electrolyte films and dielectric films.
申请公布号 WO0173864(A3) 申请公布日期 2002.07.04
申请号 WO2001US09436 申请日期 2001.03.23
申请人 CYMBET CORPORATION;JENSON, MARK, LYNN;WEISS, VICTOR, HENRY 发明人 JENSON, MARK, LYNN;WEISS, VICTOR, HENRY
分类号 A61N1/372;A61N1/378;B05C11/00;B05D5/12;C23C14/00;C23C14/06;C23C14/08;C23C16/00;C23C16/04;G02F1/133;H01G9/00;H01G9/02;H01G9/025;H01G9/038;H01G9/155;H01L21/00;H01L21/302;H01L21/461;H01L23/58;H01L31/00;H01L31/073;H01L31/18;H01M2/00;H01M2/02;H01M2/10;H01M2/14;H01M2/20;H01M4/02;H01M4/04;H01M4/1391;H01M4/1393;H01M4/1397;H01M4/40;H01M4/48;H01M4/52;H01M4/58;H01M4/88;H01M4/90;H01M6/00;H01M6/18;H01M6/40;H01M6/42;H01M6/46;H01M8/10;H01M8/12;H01M10/04;H01M10/0562;H01M10/0585;H01M10/36;H01M10/38;H01M10/42;H01M10/44;H01M10/46;H01M14/00;H04M1/02;H05K1/16 主分类号 A61N1/372
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