| 摘要 |
<p>The invention relates to an integration process in a SOI substrate (103) of a semiconductor device (100) comprising at least a dielectrically insulated well (200), which process comprises: an oxidising step directed to form an oxide layer (111); a depositing step of a nitride layer (112) onto the oxide layer (111); and a masking step, carried out onto the nitride layer (112) using a resist layer (113) and directed to define suitable photolithographic openings for forming at least one dielectric trench (104) effective to provide side insulation for the well (200). The integration process of the invention further comprises: an etching step of the nitride layer (112) and oxide layer (111), as suitably masked by the resist layer (113), the nitride layer (112) being used as a hardmask; a step of forming the at least one dielectric trench (104), which step comprises at least one step of etching the substrate (103), an oxidising step of at least sidewalls (114) of the at least one dielectric trench (104), and a step of filling the at least one trench (104) with a filling material (105); and a step of defining active areas of components to be integrated in the well (200), being carried out after the step of forming the at least one dielectric trench (104). <IMAGE></p> |
