| 发明名称 |
ELECTRICALLY PROGRAMMABLE MEMORY ELEMENT WITH IMPROVED CONTACTS. |
| 摘要 |
<p>A memory element comprising a volume of phase change memory material (250); and first and second contact for supplying an electrical signal to the memory material (250), wherein the first contact comprises a conductive sidewall spacer (130A, B). Alternately, the first contact may comprise a contact layer having an edge adjacent to the memory material (250).</p> |
| 申请公布号 |
MXPA01009609(A) |
申请公布日期 |
2002.07.02 |
| 申请号 |
MX2001PA09609 |
申请日期 |
2000.03.22 |
| 申请人 |
ENERGY CONVERSION DEVICES, INC. |
发明人 |
LOWREY, TYLER |
| 分类号 |
H01L21/8238;G11C11/56;H01L27/092;H01L27/10;H01L27/105;H01L27/24;H01L45/00;(IPC1-7):H01L47/00 |
主分类号 |
H01L21/8238 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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