| 摘要 |
A power semiconductor device includes a die having a drain contact, a source contact, a primary gate contact, a partitioning region that partitions the source contact, and a secondary gate contact disposed in the partitioning region. A conductive strip is connected to the primary and secondary gate contacts. An insulation layer encloses a segment of the conductive strip. A conductive connecting member includes a metal sheet and a conductive paste. The metal sheet is attached to the source contact via the conductive paste and is formed with a groove to expose the insulation layer from the metal sheet.
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