| 摘要 |
The invention relates to photodetectors on base of semiconductors, in particular to photoresistors, and may be used in optoelectronic system for detection of optical signals transmitted over the optical fibres into the atmosphere etc. In the photoresistor on base of semiconductors the photoactive layer is made with a porous nanometric structure, the pore spacing being one-half greater than the thickness of the layer of the space charge formed around the pores.Claims: 1Fig.: 1
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