| 摘要 |
PURPOSE: A thin film transistor and a method for manufacturing the same are provided to reduce a leakage current by enhancing ON/OFF current ratio. CONSTITUTION: A gate electrode is formed on a semiconductor substrate. A gate insulating layer is formed on the gate electrode, wherein the thickness of the gate insulating layer formed on a source region(S) is thicker than that formed on a drain region(D). A semiconductor layer(16) is formed on the gate insulating layer. The source region(S) is overlapped to the gate electrode, and the drain region(D) is off-set to the gate electrode.
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