| 摘要 |
PURPOSE: A fabrication method of transistors of semiconductor devices is provided to improve a property by forming an NMOS(N-channel Metal Oxide Semiconductor) transistor including a polysilicon gate electrode and a PMOS transistor having a metal gate electrode. CONSTITUTION: Field oxides(2), gate oxides(3), n+ polysilicon gate electrodes, and gate spacers(6) are formed on a semiconductor substrate(1) including an NMOS region(N) having an N-type source/drain(5n) and a PMOS region(P) having a P-type source/drain(5p). After forming an interlayer dielectric(7) on the resultant structure, the surfaces of the polysilicon gate electrodes are exposed by a CMP(Chemical Mechanical Polishing). The polysilicon gate electrode and gate oxide(3) in the PMOS region(P) are removed to expose the semiconductor substrate(1). Then, an RTO(Rapid Thermal Oxide) gate(3p) is formed on the exposed semiconductor substrate(1). A metal layer(9a) for a gate electrode is filled into the polysilicon gate electrode removed region, thereby respectively forming different gate electrodes in the NMOS and PMOS regions(N,P).
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