| 摘要 |
<p>PROBLEM TO BE SOLVED: To solve the problem that breakdown occurs at a portion where an interlayer insulating film thins, and a leakage current Id (off) flows between the drain and source of a MOS field effect transistor in off state when a shielding film having the same potential as a source one is arranged at the edge portion of an EQR electrode where the coverage of the interlayer insulating film is incomplete. SOLUTION: As the shielding film 47 made of a second-layer aluminum film, the first light-shielding film 47a having the same potential as a source electrode 43 on the source electrode 43, and a second light-shielding film 47b having floating potential on the EQR electrode 45 are alienated by specific distance for arranging on a guard ring electrode 44. The first light-shielding film 47a and guard ring electrode 44, and second shielding film 47b and guard ring electrode 44 are overlapped by specific dimensions so that at least direct rays do not enter the surface of a silicon substrate 31 from the portion between the first and second light-shielding films 47a and 47b.</p> |
