| 摘要 |
PROBLEM TO BE SOLVED: To provide a non-volatile ferroelectric memory, in which a defective cell can be easily detected and removed even if a process condition is changed without requiring another test mode, and a detecting method for a defective cell using the memory. SOLUTION: This device comprises a memory cell array section 50 provided with a upper part sub-cell array Sub-T, a lower part sub-cell array Sub-B and a sense amplifier 120 sensing them respectively, a word line driver 57 selecting word line drive of the upper part and the lower part sub-cell arrays Sub-T, Sub-B, an X decoder 51 selectively outputting a word line decoding signal to the word line driver 57, and a defective cell detecting pulse generating section 56 varying width of a re-stored pulse PW1 to detect (a) defective cell(s) of the upper part and the lower part sub-cell arrays Sub-T, Sub-B and outputting the resultant pulse PW1 to the word line driver 57.
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