发明名称 SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor device having a capacitor capable of assuring a prescribed electrostatic capacity and simultaneously reducing in size, and a method for manufacturing the same. SOLUTION: The semiconductor device comprises a capacitor lower electrode 3a having an upper surface and a metal film, a dielectric film 4a disposed on the upper surface of the electrode 3a and having a thickness smaller than that of the electrode 3a, and a capacitor upper electrode 6a disposed on the film 4a and having a width narrower than that of the electrode 3a and a metal film.
申请公布号 JP2002184953(A) 申请公布日期 2002.06.28
申请号 JP20000382285 申请日期 2000.12.15
申请人 MITSUBISHI ELECTRIC CORP 发明人 HORI KAZUNOBU;MATSUNUMA KENJI;SHIOZAWA KENICHIRO;AKAZAWA MORIAKI
分类号 H01L21/3205;H01L21/02;H01L21/768;H01L21/822;H01L23/52;H01L27/04;H01L27/08;(IPC1-7):H01L27/04;H01L21/320 主分类号 H01L21/3205
代理机构 代理人
主权项
地址