| 摘要 |
PURPOSE: An analysis method of defects of wafers is provided to easily discriminate different defect regions by increasing a micro-defect density using two-step thermal treatment. CONSTITUTION: An analysis method of defects of wafers comprises a first step contaminating a surface of a wafer with a metal, a second step diffusing an inert gas and the metal into the wafer by firstly annealing at a diffusion furnace in the inert gas and an oxygen mixed condition, a third step increasing an inner temperature of the diffusion furnace, a fourth step secondly performing a thermal treatment so as to precipitate an inner oxygen of the wafer using the inert gas and the metal as a core in the inert gas condition, a last step decreasing the inner temperature of the diffusion furnace.
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