| 摘要 |
PROBLEM TO BE SOLVED: To provide the manufacturing method of a semiconductor device using a damascene metal gate for preventing an electrical short-circuiting phenomenon in a damascene gate electrode due to mismatching. SOLUTION: This manufacturing method includes a step for forming a damascene gate oxide film 32 and the damascene gate electrode 33 on a semiconductor substrate 31, a step for selectively etching the damascene gate electrode by fixed thickness and for forming a recess 37 at the upper section of the damascene gate electrode, a step for forming an insulating film 39 in the recess at the upper section of the damascene gate electrode, a step for forming an interlayer insulating film 40 on the upper surface of the entire structure, and a step for selectively etching the interlayer insulating film 40 and for forming a contact hole 42 exposing one portion of the semiconductor substrate.
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