| 摘要 |
PURPOSE: A formation method of a metal pattern of semiconductor devices is provided to prevent a signal delay efficiency due to an increase of a coupling capacitance and to embody the semiconductor devices insensitive to a crosstalk by varying a shape of a dummy metal pattern. CONSTITUTION: A dummy metal pattern(2a) is formed between a pair of signal lines(1). At this time, the dummy metal pattern(2a) has a surface increasing shape as becoming more distant from the signal lines(1), so that the surface increasing shape is able to include many shape, such as a circular-type shape, a cross-type shape, and a stick-type shape as the signal lines(1). In case of selecting the stick-type shape dummy metal pattern, the dummy metal pattern has to be grounded.
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