| 摘要 |
PURPOSE: A MOS(Metal Oxide Semiconductor) transistor having a test pattern is provided to reduce a measuring time and a measuring cost by an electrical measurement. CONSTITUTION: A MOS transistor having a test pattern comprises an active region(100) formed with a source and a drain regions, gate pads(122,124) formed at both ends of a gate line(120) connected to the active region(100), a drain pad(104) formed at an end of a drain line(102) connected to the drain region of the active region(100) through a contact(106), a source pad(110) formed at an end of a source line(108) connected to the source region through another contact(112), a bulk pad(144) formed at an end of a bulk line(142) connected bulk regions(140) protruded from the active region(100), and test pads(128a,128b,132a,132b) respectively formed at ends of test lines(126a,126b,130a,130b) connected to the gate pads(122,124) through common contacts(121,123). At this time, a voltage and a current characteristics are measured for measuring device characteristics through the pads(104,110,144,122,124).
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