APPARATUS AND METHOD FOR PROCESSING PLASMA TO GLASS SUBSTRATE

摘要

PROBLEM TO BE SOLVED: To provide an apparatus and a method for processing plasma capable of continuously etching source and drain electrodes and a doped layer at a high etching rate and with little damage to the middle of a channel layer in the same etching chamber. SOLUTION: The state of plasma for etching is changed between the state that the metal laminated film layer of a substrate to be processed is etched and the state that layers after a silicon layer containing impurities are etched to thereby perform the two etching in one vacuum chamber.