| 摘要 |
PROBLEM TO BE SOLVED: To provide a convenient method for isolating a semiconductor element in which concentration of field or increase of leak current can be prevented. SOLUTION: The method for isolating a semiconductor element by shallow trench isolation comprises a step for forming a pad oxide film and an SiN film sequentially on a silicon substrate, a step for forming a specified photoresist pattern the SiN film, a step for making an opening by dry etching the SiN film and the pad oxide film using that pattern as a mask, a step for etching back the pad oxide film on the side face of at the opening, and a step for making a trench by dry etching the silicon substrate exposed at the opening and the etch back region of the pad oxide film.
|
