发明名称 METHOD OF MANUFACTURING CLEARER SILICON FILM
摘要 PROBLEM TO BE SOLVED: To improve the quality and reliability of a thin-film transistor(TFT). SOLUTION: A method of reducing contamination in polycrystalline silicon regions on a display substrate comprises a step (a) of depositing a base coating on the display substrate, a step (b) of annealing the base coating, having an upper surface, a step (c) of decontaminating the upper surface of the base coating, a step (d) of depositing amorphous silicon on the decontaminated base coating and step (e) of crystallizing the amorphous silicon, to form polycrystalline regions.
申请公布号 JP2002184697(A) 申请公布日期 2002.06.28
申请号 JP20010298612 申请日期 2001.09.27
申请人 SHARP CORP 发明人 NISHIKI HIROHIKO;APOSTLOS BOUTOSASU
分类号 C23C14/34;H01L21/20;H01L21/336;H01L29/786;(IPC1-7):H01L21/20 主分类号 C23C14/34
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