SEMICONDUCTOR SUBSTRATE, FIELD EFFECT TRANSISTOR, INTEGRATED CIRCUIT, AND METHOD FOR PRODUCING SEMICONDUCTOR SUBSTRATE

摘要

Disclosed is a semiconductor substrate that can be easily produced by providing a semiconductor layer, which has been formed on one substrate, onto another substrate by bonding the substrates together with an insulating film therebetween, without damaging the crystal structure of the semiconductor layer and thus maintaining the high-quality crystal structure of the semiconductor layer. Also disclosed are a field effect transistor, an integrated circuit and a method for producing a semiconductor substrate. In a MISFET (1), since an oxide film (6) having a flat surface is formed on a group III-V compound semiconductor layer (7) on an InP substrate (12) by an ALD method, the oxide film (6) and an Si substrate (2) can be firmly joined with each other only by bonding the oxide film (6) and the Si substrate (2) with each other at room temperature. Consequently, the group III-V compound semiconductor layer (7), which has been formed on the InP substrate (12), can be provided onto another substrate, namely the Si substrate (2), and the MISFET (1) can be easily produced without damaging the crystal structure of the group III-V compound semiconductor layer (7) and thus maintaining the high-quality crystal structure of the group III-V compound semiconductor layer (7).