发明名称 |
INTRALEVEL DECOUPLING CAPACITOR, METHOD OF MANUFACTURE AND TESTING CIRCUIT OF THE SAME |
摘要 |
A decoupling capacitor is provided for a semiconductor device and may include a first low dielectric insulator layer and a low resistance conductor formed into at least two interdigitized patterns on the surface of the first low dielectric insulator in a single interconnect plane. A high dielectric constant material may be provided between the two patterns. A circuit for testing a plurality of these capacitors is also provided which includes a charge monitoring circuit, a coupling circuit and a control circuit. |
申请公布号 |
US2002081832(A1) |
申请公布日期 |
2002.06.27 |
申请号 |
US19990330803 |
申请日期 |
1999.06.11 |
申请人 |
BERNSTEIN KERRY;BRACCHITTA JOHN A.;COTE WILLIAM J.;NING TAK H.;PRICER WILBUR D. |
发明人 |
BERNSTEIN KERRY;BRACCHITTA JOHN A.;COTE WILLIAM J.;NING TAK H.;PRICER WILBUR D. |
分类号 |
H01L21/02;H01L27/08;(IPC1-7):H01L21/823;H01L21/824;H01L21/476;H01L29/00 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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