SEMICONDUCTOR DEVICE, EPITAXIAL WAFER, AND METHOD OF MANUFACTURING THE SAME

摘要

A manufacturing method and a semiconductor device produced by the method are provided, in which the semiconductor device can easily be manufactured while the hydrogen concentration is decreased. An N-containing InGaAs layer 3 is grown on an InP substrate by the MBE method, and thereafter a heat treatment is provided at a temperature in the range of 600° C. or more and less than 800° C., whereby the average hydrogen concentration of the N-containing InGaAs layer 3 is made equal to or 2x1017/cm3 or less than.