| 摘要 |
It is an object to provide a semiconductor device which has high sensitivity and excellent electrical power saving due to a structure in which an element having a pin photodiode and a MOS transistor which are integrated is formed in an SOI substrate or the like, and to provide a production method thereof and an electronic device. Since the pin photodiode has a p region 45, an i region 42, and an n region 43 which are horizontally arranged in a silicon layer 4, the element having the pin photodiode 1a and the MOS transistor 1b which are integrated is formed in the SOI substrate. The n region 43 of the pin photodiode 1a and the source of the MOS transistor 1b are the same, and, by making use of the commonality, the integrated elements can be arranged in a matrix pattern.
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