PLASMA ETCHING DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

PURPOSE: A plasma etching device and a method for manufacturing the same are provided to assure a uniform etching rate on an overall surface of a semiconductor wafer. CONSTITUTION: After mounting a semiconductor wafer(10) on a lower electrode(14), an annular focusing ring(30) is disposed along the outer edge of the wafer(10). The annular focusing ring(30) comprises a first ring(32), a second ring(34) and a third ring(36). The first ring(32) made of a quartz is disposed at the outermost peripheral side. The second ring(34) made of a silicon is disposed at an inside of the ring(32). The third ring(36) is disposed at the innermost peripheral side so as to be superposed with the peripheral edge of the wafer(10). The third ring(36) is composed of a material, indicating a slow temperature rise as compared to the silicon during executing of the plasma etching.