发明名称 GATE LENGTH CONTROL FOR SEMICONDUCTOR CHIP DESIGN
摘要 A semiconductor device includes first and second polysilicon areas on a chip. The first polysilicon area corresponds to circuit elements of the semiconductor device. At least some of the first polysilicon corresponds to polysilicon gates. At least some of the second polysilicon area comprises contacts of the semiconductor device. Metal covers the polysilicon contacts.
申请公布号 WO0250908(A2) 申请公布日期 2002.06.27
申请号 WO2001US47243 申请日期 2001.12.05
申请人 HONEYWELL INTERNATIONAL INC. 发明人 YUE, CHEISAN, J.;HANDELAND, TODD, N.;VOGT, ERIC, E.
分类号 H01L27/146;H01L21/02;H01L21/822;H01L23/482;H01L27/04;H01L29/423 主分类号 H01L27/146
代理机构 代理人
主权项
地址
您可能感兴趣的专利