发明名称 Arrangement for contacting a semiconductor substrate comprises a substrate, a conducting layer, a conducting layer arranged on the conducting layer, and a contact needle inserted through the insulating layer up to the conducting layer
摘要 Arrangement for contacting a semiconductor substrate comprises a substrate (1) having a first main surface (2) lying opposite a second main surface (3); a conducting layer (5) arranged on the first main surface; a first conducting layer (6) arranged on the conducting layer; and a first contact needle (10) inserted through the first insulating layer up to the conducting layer. An Independent claim is also included for a process for contacting a semiconductor substrate. Preferred Features: A second contact needle (11) is inserted through the first insulating layer up to the conducting layer. The first contact needle has a first electrical connection (12) and forms an electrical connection between the conducting layer and the electrical connection. A barrier layer (4) is arranged between the substrate and the conducting layer.
申请公布号 DE10111803(A1) 申请公布日期 2002.06.27
申请号 DE2001111803 申请日期 2001.03.12
申请人 INFINEON TECHNOLOGIES AG 发明人 BIRNER, ALBERT;GOLDBACH, MATTHIAS;FRANOSCH, MARTIN;LEHMANN, VOLKER;LUETZEN, JOERN
分类号 C25D7/12;H01L21/288 主分类号 C25D7/12
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