Halbleiterlaser mit lateraler Stromführung und Verfahren zu dessen Herstellung

摘要

The invention relates to a semiconductor laser with a semiconductor body (1) that comprises a first and a second main surface, preferably provided with one contact surface (2,3) each, and a first and a second mirror surface (6,7). An active layer (4) and a current-carrying layer (5) are interposed between the main surfaces. The current carrying layer (5) has at least one strip-shaped resistance zone (8) that runs at an angle to the resonator axis (18) and whose specific surface resistance is higher in at least some zones than in the zones of the current carrying layer (5) adjoining the resistance zone (8).