Semiconductor memory device and manufacturing method and mask data preparing method for the same

摘要

A capacitive insulating film and an upper electrode are formed at the inner surface of the cylindrical lower electrode to form a capacitive cell. Near the capacitive cell, a groove with the same depth as that of the capacitive cell is formed and electric conductive layers are formed at the inner surface thereof. The electric conductive layer and upper electrode are connected by the upper electrode extending part, and at the bottom inside the groove, the upper electrode contact is connected to the electric conductive layer.