| 摘要 |
PURPOSE: A sensing circuit of a flash memory device is provided, which reduces a precharge time of a selected memory cell array and therefore improves an operation speed of the device. CONSTITUTION: A voltage is applied a source port of a bit line of a flash memory cell array(20), and the first switching unit applies a voltage to the above flash memory cell array according to the first control signal. The second switching unit controls a potential of a sensing node according to a reference voltage. The third and the fourth switching unit apply a read voltage according to the potential of the sensing node and a read signal. A latch unit(21) maintains the read voltage inputted through the third and the fourth switching unit. And the fifth switching unit initializes the above latch unit according to the second control signal. The first switching unit is an NMOS transistor connected between the flash memory cell array and the sensing node, and the second switching unit is an NMOS transistor connected between the sensing node and a ground terminal.
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