| 摘要 |
The method concerns in situ end point determination during chemical-mechanical polishing (CMP) of a coated semiconductor wafer in a polishing machine incorporating a rotating disk (2) with a polishing pad, and a polishing head (1) which is held with a variable pressure against the polishing pad, and carries the semiconductor wafer. A polishing agent suspension from a supply unit (3, 4) is taken by the polishing pad to the polishing head and from there to an electrode (6). A temporal variation in the potential, which is proportional to the abrasion of the metal ions removed from the semi-conductor wafer, is measured by means of this electrode. The drop of the potential curve is used to determine the end point and to stop the CMP process. |
