AMORPHIZATION OF SUBSTRATE TO PREVENT SILICIDE ENCROACHMENT INTO CHANNEL REGION OF FIELD EFFECT TRANSISTOR

摘要

A MOSFET includes silicided source/drain terminals (106) and a substantially metal-free channel region (112), wherein the metal is characterized in that it diffuses more easily into the material of the substrate which contains the source/drain terminals (106) than the material of the substrate diffuses into the metal. In a further aspect of the present invention, a portion of the source/drain terminals (106) of a MOSFET are converted to an amorphous material (122) prior to being reacted with a metal.