| 摘要 |
PURPOSE: A fabrication method of capacitors is provided to increase a capacitance by using multilayer oxides having different etching selectivity. CONSTITUTION: After forming a first oxide(32) on a semiconductor substrate(31), bit lines(33) are formed on the first oxide. A first nitride(34), a second oxide(35), a second nitride(36) and a third oxide(37) are sequentially formed on the resultant structure. A contact hole is formed by sequentially patterning the third oxide, the second nitride, the second oxide, the first nitride and the first oxide. A polysilicon plug(38) is filled into the contact hole. After forming a fourth oxide(39) made of USG or HLD, a fifth oxide(40) made of a plasma TEOS having relatively low etching selectivity compared to the fourth oxide(39) is formed. By patterning the plasma TEOS film(40) and the USG film(39), a lower electrode formation hole is formed. Then, a lower electrode(43) is formed on the resultant structure.
|
