发明名称 CERAMIC SEMICONDUCTOR, CAPABLE OF INCREASING DENSITY OF SURROUNDING SUPEROXIDE IONS AFTER HEATING
摘要 FIELD: chemistry.SUBSTANCE: invention can be used for increasing density of surrounding superoxide ions after heating. Present invention consists in that when forming a ceramic semiconductor its doped oxide material able to intensify space charge effect, wherein said ceramic semiconductor has at least one through hole so that after ceramic semiconductor becomes electroconductive, electric current and heat are generated therein, and outer shell electrons of said ceramic semiconductor are separated from it and remain in through holes ceramic semiconductor accumulate in through holes with formation of an electron cloud; and after air passes through holes, oxygen from air interacts with electron and then they are combined to form a superoxide ion, such that ceramic semiconductor can discharged said superoxide ion.EFFECT: technical result is higher density of surrounding superoxide ions.9 cl, 3 dwg
申请公布号 RU2586408(C1) 申请公布日期 2016.06.10
申请号 RU20150100661 申请日期 2015.01.15
申请人 CHAN CHUN-TAJ;CHAN CHIA-KHAO 发明人 CHAN CHUN-TAJ;CHAN CHIA-KHAO
分类号 H01L29/26 主分类号 H01L29/26
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