METHOD FOR FABRICATING OXIDE LAYER FOR SOLAR CELL USING RAPID THERMAL PROCESS

摘要

PURPOSE: A method for fabricating an oxide layer for a solar cell using a rapid thermal process(RTP) process is provided to reduce contamination caused by a metal impurity and to greatly reduce a carrier recombination rate on an interface with silicon. CONSTITUTION: Ozone is injected to an RTP chamber in which a silicon wafer is placed. Ultraviolet rays are radiated to form SiOx and a metal oxide on the silicon wafer. Infrared rays are radiated to the inside of the RTP chamber to heat the silicon wafer so that the SiOx and the metal oxide are eliminated. Chlorine source and oxygen are injected to the inside of the RTP chamber so that the metal impurity is removed by chlorine and silicon oxide is formed by oxygen.